3d memory array with memory cells having a 3d selector and a storage component

ABSTRACT

A memory cell is disclosed. The memory cell includes a storage component that includes a chalcogenide stack that includes a plurality of layers of material and a selector component that includes a Schottky diode.

TECHNICAL FIELD

Embodiments of the disclosure pertain to 3D memory arrays and, inparticular, to 3D memory arrays with memory cells that include a 3Dselector and a storage component.

BACKGROUND

Three dimensional (3D)-stacked dynamic random access memory (DRAM) is anemerging technology where multiple DRAM chips and logic layers arestacked on top of each other, e.g., for high bandwidth memory (HBM), andconnected by through silicon vias (TSV). By avoiding input/output (I/O)pin count limitations, dense TSV connections allow high bandwidth andlow latency communication within the stack. However, the stacking ofmultiple chips requires the formation of multiple substrates and TSVs.This layering process leads to higher cost.

3D NAND flash memory can be used to make solid state drives (SSD). 3DNAND flash memory is a type of flash memory in which memory cells arestacked vertically in multiple layers. 3D NAND offers the potential forhigher capacity memory in a smaller physical space than 2D NAND. Anadvantage of 3D NAND is a manufacturing cost that is lower than themanufacturing cost for 2D NAND. The manufacture of 3D NAND memory cantake place in the same manufacturing facility as 2D NAND memory.However, the 3D NAND that is produced is slow and requires highvoltages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an illustration of a three dimensional (3D) memory array thatincludes a 3D memory cell that is structured according to an embodiment.

FIG. 1B is an illustration of a low voltage memory cell according to anembodiment.

FIG. 1C is an example chalcogenide stack of a resistor according to anembodiment.

FIG. 1D is an illustration of the material structure of a Schottky diodeaccording to an embodiment.

FIG. 2A is an illustration of a top cross-sectional view of an adjacentpair of memory cells in an embodiment.

FIG. 2B is an illustration of a front cross-sectional view of anadjacent pair of memory cells in an embodiment.

FIG. 3 shows a 3D crosspoint implementation in accordance with anembodiment.

FIG. 4 is a graph of rectification ratio versus on current density ofvarious materials.

FIG. 5 is a flowchart of a method for forming a 3D memory array thatincludes a 3D memory cell according to an embodiment.

FIG. 6 illustrates a computing device in accordance with oneimplementation of an embodiment.

FIG. 7 illustrates an interposer that includes one or more embodiments.

DESCRIPTION OF THE EMBODIMENTS

Three dimensional (3D) memory arrays with memory cells that have a 3Dselector and a storage component are described. In the followingdescription, numerous specific details are set forth, such as specificintegration and material regimes, in order to provide a thoroughunderstanding of embodiments of the present disclosure. It will beapparent to one skilled in the art that embodiments of the presentdisclosure may be practiced without these specific details. In otherinstances, well-known features, such as integrated circuit designlayouts, are not described in detail in order to not unnecessarilyobscure embodiments of the present disclosure. Furthermore, it is to beappreciated that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

Certain terminology may also be used in the following description forthe purpose of reference only, and thus are not intended to be limiting.For example, terms such as “upper”, “lower”, “above”, and “below” referto directions in the drawings to which reference is made. Terms such as“front”, “back”, “rear”, and “side” describe the orientation and/orlocation of portions of the component within a consistent but arbitraryframe of reference which is made clear by reference to the text and theassociated drawings describing the component under discussion. Suchterminology may include the words specifically mentioned above,derivatives thereof, and words of similar import.

Some previous approaches to providing dense memory cell sizes for highbandwidth memory (HBM) includes stacking dynamic random access memory(DRAM) chips and using 3D NAND memory arrays. Shortcomings of theprevious approaches include the expensive processing that stackingmultiple chips requires, including the need to form multiple substratesand through silicon vias (TSVs). In addition, 3D NAND memory arrays areslow and require high voltages. A process and device that overcomes theshortcomings of such approaches is disclosed herein. As part of adisclosed approach, a memory cell structure that includes achalcogenide-based multi-layer stack and a Schottky diode is used aspart of a 3D array. The chalcogenide-based multi-layer stack andSchottky diode provides a unique combination of voltage, speed, anddensity and performs better than previous memory technologies such asHBM, Optane, and 3D NAND.

FIG. 1A is an illustration of a 3D memory array 100 that includes a 3Dmemory cell that is structured according to an embodiment. In FIG. 1Athe 3D memory array includes bit lines 101, contacts 103, word lines105, insulating layers 107, substrate 109, pillars 111, slits 113,stacks 115 and individual memory cell 117.

Referring to FIG. 1A, the bit lines 101 are formed at the top of thearray structure and are coupled to the pillars 111. The pillars 111 areoriented orthogonally with respect to the substrate 109. The pillars 111extend through the word line layers 105 that are formed parallel to thesubstrate 109. The stacks 115 include alternating layers of conductiveand insulating material. The conductive layers form the word line layers105. The insulating layers 107 separate the word line layers 105. Thestacks 115 are separated by slits 113.

The individual memory cells 117 are formed at the intersections of thepillars 111 and the word line layers 105. FIG. 1B is a schematic showingthe components of the individual memory cells 117 according to anembodiment. Referring to FIG. 1B, the memory cells 117 can include aresistor 117 a and a diode 117 b (shown as a switch). In an embodiment,the resistor 117 a stores the memory cell logic states and the diode 117b controls access to the stored logic states. In an embodiment, when amemory cell is addressed the diode 117 b selector is caused to conductsuch that the contents of the memory cell can be accessed. In addition,when the memory cell has not been addressed, the diode 117 b is reversedbias and blocks sneak current such that sneak current paths areprevented in the memory array. In an embodiment, the resistor 117 a caninclude a chalcogenide multi layered stack. In other embodiments, theresistor 117 a can include other materials. In an embodiment, thematerial makeup of the multi layered stack can include but is notlimited to GeTe/Sb2Te3, Ge30Te70/Sb2Te3 and GeTe/Sb. In otherembodiments, other materials and stack arrangements can be used, suchother materials can include but are not limited to Ge/Sb.

In an embodiment, the chalcogenide multi-layer implementations operatewith low voltage and currents at fast speeds. Thus, chalcogenidemulti-layer implementations are suitable for HBM in addition to phasechange memories in high capacity and speed applications. Long-termretention can also be traded off for HBM, since periodic refreshes arepermitted for near-memory applications.

In an embodiment, the switching mechanism of chalcogenide multi-layerimplementations requires less energy than conventionalmelt/recrystallization/amorphization that is used in conventional phasechange memories with homogenous materials like Ge2Sb2Te5.

FIG. 1C is an example chalcogenide stack of resistor 117 a according toan embodiment. In the FIG. 1C example, chalcogenide stack includes topelectrode 117 a(1), top layer 117 a(3), superlattice 117 a(5), bottomlayer 117 a(7), and bottom electrode 117 a(9). Referring to FIG. 1C, thetop electrode 117 a(1) is formed above the top layer 117 a(3). Thesuperlattice 117 a(5) is formed above the bottom layer 117 a(7). Thebottom layer 117 a(7) is formed above the bottom electrode 117 a(9). Inan embodiment, the top electrode 117 a(1) is formed from W. In otherembodiments, the top electrode 117 a(1) can be formed from othermaterials. In an embodiment, the top layer 117 a(3) can be formed fromGeTe. In other embodiments, the top layer 117 a(3) can be formed fromother materials. In an embodiment, the superlattice 117 a(5) can beformed from alternating layers of Sb2Te3 and GeTe. In other embodiments,the superlattice 117 a(5) can be formed from alternating layers of othermaterials. In an embodiment, the bottom layer 117 a(7) can be formedfrom Sb2Te3. In other embodiments, the bottom layer 117 a(7) can beformed from other materials. In an embodiment, bottom layer 117 a(7) canhave a length of 10 nm. In other embodiments, bottom layer 117 a(7) canhave any other suitable length. In an embodiment, the bottom electrode117 a(9) is formed from W. In other embodiments, the bottom electrode117 a(9) can be formed from other materials.

Referring to FIG. 1B, in an embodiment, the diode 117 b can include aSchottky diode. In other embodiments, the diode 117 b can include othertypes of diodes. In an embodiment, the diode 117 b functions as alow-voltage, fast selector mechanism. In an embodiment, the materialstructure of the diode 117 b can include a semiconducting oxide with aSchottky interface on one side and an ohmic interface on the other. Inan embodiment, Schottky diodes can be implemented as the selector in astraightforward manner. In other embodiments, the selector can beimplemented using a P/N diode that is formed from semiconducting oxides.In still other embodiments, the selector can be implemented using a P/Ndiode that is formed from other materials.

FIG. 1D is an illustration of an example material configuration of theSchottky diode 117 b according to an embodiment. In the FIG. 1D example,Schottky diode 117 b includes molybdenum 117 b(1), IGZO 117 b(3),palladium 117 b(5), titanium 117 b(7) and glass 117 b(9). In anembodiment, the Pd/IGZO interface is a Schottky interface, while theMo/IGZO interface is an ohmic interface. In an embodiment, the Schottkyelectrode can include metal having a lower metal workfunction thanmolybdenum, which can improve ON-current density. In an embodiment,metals with lower workfunctions can include but are not limited to TiNor W. In an embodiment, the IGZO 117 b(3), the palladium 117 b(5) andthe titanium 117 b(7) can have the lengths shown in FIG. 1D. In otherembodiments, the IGZO 117 b(3), the palladium 117 b(5) and the titanium117 b(7) can have other lengths. Fermi level pinning can be mitigated,through either the formation of sufficient oxygen concentrations at theSchottky interface or by separately introducing a thin conductive oxideto passivate defects within the semiconducting bandgap.

Referring again to FIG. 1A, in an embodiment the bit lines 101 can beformed from tungsten. In other embodiments, the bit lines 101 can beformed from other materials. In an embodiment, the contacts 103 can beformed from tungsten. In other embodiments, the contacts 103 can beformed from other materials. In an embodiment, the word lines 105 can beformed from tungsten in other embodiments, the word lines 105 can beformed from other materials. In an embodiment, the insulating layers 107can be formed from an oxide. In other embodiments, the insulating layers107 can be formed from other materials. In an embodiment, the substrate109 can be formed from materials that include silicon and galliumnitride. In other embodiments, the substrate 109 can be formed fromother materials. In an embodiment, the pillars 111 can be formed fromtungsten. In other embodiments, the pillars 111 can be formed from othermaterials.

In operation, memory cells can be accessed by applying appropriatevoltage levels to the word lines and the bit lines associated with thememory cell that is being accessed. As part of a disclosed approach, theaccessed memory cell can include a chalcogenide-based multi-layeredmemory device for memory storage and a Schottky diode that controlsaccess. In an embodiment, the chalcogenide-based multi-layer stack plusSchottky diode provides a unique combination of low voltage, speed,density which exceeds the performance of previous memory technologiessuch as HBM, other high capacity and speed technologies, and 3D NAND.The performance advantages are provided without the need to stackmultiple chips, use expensive processing, or multiple substrates andTSVs.

FIGS. 2A and 2B are illustrations of cross-sectional views of anadjacent pair of memory cells 200A and 200B in an embodiment. FIGS. 2Aand 2B show cross-sections of the type of selector and memory componentsthat can be used to form tiers of memory cells that include the selectorand memory components. FIG. 2A shows a top cross-sectional view ofadjacent memory cells 200A and 200B, and FIG. 2B shows a frontcross-sectional view of the adjacent memory cells 200A and 200B alongline A-A of FIG. 2A. In the FIG. 2A embodiment, the memory cell 200Aincludes first electrode 203 a, selector 205 a, second electrode 207 a,memory 209 a and bit line conductor 211 a. In addition, the memory cell200B includes first electrode 203 b, selector 205 b, second electrode207 b, memory 209 b and bit line conductor 211 b. The word lineconductor 201 is the same for the memory cell 200A and the memory cell200B.

Referring to FIG. 2A, in an embodiment, the word line conductor 201surrounds the materials that are a part of the stack of materials thatform the memory cell 200A and the memory cell 200B. Moreover, thematerials that are used to form the memory cell 200A and the memory cell200B are formed as concentric layers of material. For example, withregard to memory cell 200A, the first electrode 203 a surrounds theselector 205 a, the selector 205 a surrounds the second electrode 207 a,the second electrode 207 a surrounds the memory 209 a, and the memory209 a surrounds the bit line conductor 211 a. Similarly, with regard tothe memory cell 200B, the first electrode 203 b surrounds the selector205 b, the selector 205 b surrounds the second electrode 207 b, thesecond electrode 207 b surrounds the memory 209 b and the memory 209 bsurrounds the bit line conductor 211 b.

Referring to FIG. 2B, the bit line conductors 211 a and 211 b and thememory 209 a and 209 b extend the full length of the memory cells 200Aand 200B respectively. The word line 201, the first electrodes 203 a and203 b, the selectors 205 a and 205 b and the second electrodes 207 a and207 b are interrupted by space 206. In an embodiment, the memory cell200A and the memory cell 200B can be addressed by the application ofpredetermined voltages to the word line and the bit line that isassociated with the memory cell. For example, to address memory cell200A, predetermined voltages are applied to the word line conductor 201and the bit line conductor 211 a that is associated with memory cell200A. The voltages cause the selector 205 a to conduct such that thememory 209 a can be accessed. Similarly, to address memory cell 200Bpredetermined voltages are applied to the word line conductor 201 andthe bit line conductor 211 b that is associated with memory cell 200B.These voltages cause the selector 205 b to conduct such that the memory209 b can be accessed.

FIG. 3 shows a 3D crosspoint array 300 implementation in accordance withan embodiment. In an embodiment, the cell deselect mechanism for the 3Dcrosspoint array 300 of FIG. 3D, can be different from the cell deselectmechanism of the 3D stacked array 100 of FIG. 1A. For example, thememory cell deselect voltage for memory cell in the 3D stacked array 100embodiment of FIG. 1A can be −V. In contrast, the memory cell deselectvoltage for the crosspoint array 300 can be V/2. In other embodiments,the 3D stacked array 100 and the crosspoint array 300 can have otherdeselect voltages. The memory cell deselect voltage for crosspoint array300 results from the bidirectional character of the selector. A fasterspeed and lower voltage makes the 3D crosspoint array 300 examplesuitable for high bandwidth memory (HBM) applications.

FIG. 4 is a graph of rectification ratio versus on current density ofvarious materials. FIG. 4 shows material that has both favorablerectification ratio and on current density, material that has bothunfavorable rectification ratio and on current ratio, material that hasmediocre rectification ratio and on current density, material that hasfavorable rectification ratio and unfavorable on current density andmaterial that has unfavorable rectification ratio and favorable oncurrent density. Referring to FIG. 4, SCSi p-n junctions have bothfavorable rectification ratio and current density. Pt and TiO2 Schottkydiodes have favorable rectification ratio and unfavorable on currentdensity, and Ag and n-ZnO Schottky diodes have relatively mediocrerectification ratio and mediocre on-current density. Pd and IGZOSchottky diodes reportedly provide favorable rectification ratio, butwork to achieve higher on-current density is ongoing.

FIG. 5 is a flowchart of a method for forming a 3D memory array thatincludes a 3D memory cell that is structured according to an embodiment.Referring to FIG. 5, at 501 a memory component is formed that includes achalcogenide stack that includes a plurality of layers of material. At503, a selector component is formed that includes a Schottky diode. Inan embodiment, the chalcogenide stack includes a superlattice structure.In an embodiment, the memory cell includes a first electrode surroundingthe selector component. In an embodiment, the memory cell includes asecond electrode surrounded by the selector component. In an embodiment,the second electrode surrounds the storage component. In an embodiment,the storage component surrounds a bit line conductor. In an embodiment,the Schottky diode includes a Pd-IGZO Schottky interface. In otherembodiments, the diode can include other types of interfaces.

Implementations of embodiments of the invention may be formed or carriedout on a substrate, such as a semiconductor substrate. In oneimplementation, the semiconductor substrate may be a crystallinesubstrate formed using a bulk silicon or a silicon-on-insulatorsubstructure. In other implementations, the semiconductor substrate maybe formed using alternate materials, which may or may not be combinedwith silicon, that include but are not limited to germanium, indiumantimonide, lead telluride, indium arsenide, indium phosphide, galliumarsenide, indium gallium arsenide, gallium antimonide, or othercombinations of group III-V or group IV materials. Although a fewexamples of materials from which the substrate may be formed aredescribed here, any material that may serve as a foundation upon which asemiconductor device may be built falls within the spirit and scope ofthe present invention.

A plurality of transistors, such as metal-oxide-semiconductorfield-effect transistors (MOSFET or simply MOS transistors), may befabricated on the substrate. In various implementations of theinvention, the MOS transistors may be planar transistors, nonplanartransistors, or a combination of both. Nonplanar transistors includeFinFET transistors such as double-gate transistors and tri-gatetransistors, and wrap-around or all-around gate transistors such asnanoribbon and nanowire transistors. Although the implementationsdescribed herein may illustrate only planar transistors, it should benoted that the invention may also be carried out using nonplanartransistors.

Each MOS transistor includes a gate stack formed of at least two layers,a gate dielectric layer and a gate electrode layer. The gate dielectriclayer may include one layer or a stack of layers. The one or more layersmay include silicon oxide, silicon dioxide (SiO2) and/or a high-kdielectric material. The high-k dielectric material may include elementssuch as hafnium, silicon, oxygen, titanium, tantalum, lanthanum,aluminum, zirconium, barium, strontium, yttrium, lead, scandium,niobium, and zinc. Examples of high-k materials that may be used in thegate dielectric layer include, but are not limited to, hafnium oxide,hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide,zirconium oxide, zirconium silicon oxide, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate. In some embodiments, an annealing processmay be carried out on the gate dielectric layer to improve its qualitywhen a high-k material is used.

The gate electrode layer is formed on the gate dielectric layer and mayconsist of at least one P-type workfunction metal or N-type workfunctionmetal, depending on whether the transistor is to be a PMOS or an NMOStransistor. In some implementations, the gate electrode layer mayconsist of a stack of two or more metal layers, where one or more metallayers are workfunction metal layers and at least one metal layer is afill metal layer.

For a PMOS transistor, metals that may be used for the gate electrodeinclude, but are not limited to, ruthenium, palladium, platinum, cobalt,nickel, and conductive metal oxides, e.g., ruthenium oxide. A P-typemetal layer will enable the formation of a PMOS gate electrode with aworkfunction that is between about 4.9 eV and about 5.2 eV. For an NMOStransistor, metals that may be used for the gate electrode include, butare not limited to, hafnium, zirconium, titanium, tantalum, aluminum,alloys of these metals, and carbides of these metals such as hafniumcarbide, zirconium carbide, titanium carbide, tantalum carbide, andaluminum carbide. An N-type metal layer will enable the formation of anNMOS gate electrode with a workfunction that is between about 3.9 eV andabout 4.2 eV.

In some implementations, the gate electrode may consist of a “U”-shapedstructure that includes a bottom portion substantially parallel to thesurface of the substrate and two sidewall portions that aresubstantially perpendicular to the top surface of the substrate. Inanother implementation, at least one of the metal layers that form thegate electrode may simply be a planar layer that is substantiallyparallel to the top surface of the substrate and does not includesidewall portions substantially perpendicular to the top surface of thesubstrate. In further implementations of the invention, the gateelectrode may consist of a combination of U-shaped structures andplanar, non-U-shaped structures. For example, the gate electrode mayconsist of one or more U-shaped metal layers formed atop one or moreplanar, non-U-shaped layers.

In some implementations of the invention, a pair of sidewall spacers maybe formed on opposing sides of the gate stack that bracket the gatestack. The sidewall spacers may be formed from a material such assilicon nitride, silicon oxide, silicon carbide, silicon nitride dopedwith carbon, and silicon oxynitride. Processes for forming sidewallspacers are well known in the art and generally include deposition andetching process steps. In an alternate implementation, a plurality ofspacer pairs may be used, for instance, two pairs, three pairs, or fourpairs of sidewall spacers may be formed on opposing sides of the gatestack.

As is well known in the art, source and drain regions are formed withinthe substrate adjacent to the gate stack of each MOS transistor. Thesource and drain regions are generally formed using either animplantation/diffusion process or an etching/deposition process. In theformer process, dopants such as boron, aluminum, antimony, phosphorous,or arsenic may be ion-implanted into the substrate to form the sourceand drain regions. An annealing process that activates the dopants andcauses them to diffuse further into the substrate typically follows theion implantation process. In the latter process, the substrate may firstbe etched to form recesses at the locations of the source and drainregions. An epitaxial deposition process may then be carried out to fillthe recesses with material that is used to fabricate the source anddrain regions. In some implementations, the source and drain regions maybe fabricated using a silicon alloy such as silicon germanium or siliconcarbide. In some implementations the epitaxially deposited silicon alloymay be doped in situ with dopants such as boron, arsenic, orphosphorous. In further embodiments, the source and drain regions may beformed using one or more alternate semiconductor materials such asgermanium or a group III-V material or alloy. And in furtherembodiments, one or more layers of metal and/or metal alloys may be usedto form the source and drain regions.

One or more interlayer dielectrics (ILD) are deposited over the MOStransistors. The ILD layers may be formed using dielectric materialsknown for their applicability in integrated circuit structures, such aslow-k dielectric materials. Examples of dielectric materials that may beused include, but are not limited to, silicon dioxide (SiO2), carbondoped oxide (CDO), silicon nitride, organic polymers such asperfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass(FSG), and organosilicates such as silsesquioxane, siloxane, ororganosilicate glass. The ILD layers may include pores or air gaps tofurther reduce their dielectric constant.

FIG. 6 illustrates a computing device 600 in accordance with oneimplementation of an embodiment. The computing device 600 houses a board602. The board 602 may include a number of components, including but notlimited to a processor 604 and at least one communication chip 606. Theprocessor 604 is physically and electrically coupled to the board 602.In some implementations the at least one communication chip 606 is alsophysically and electrically coupled to the board 602. In furtherimplementations, the communication chip 606 is part of the processor604.

Depending on its applications, computing device 600 may include othercomponents that may or may not be physically and electrically coupled tothe board 602. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 606 enables wireless communications for thetransfer of data to and from the computing device 600. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 606 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 600 may include a plurality ofcommunication chips 606. For instance, a first communication chip 606may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 606 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 604 of the computing device 600 includes an integratedcircuit die packaged within the processor 604. In some implementationsof the invention, the integrated circuit die of the processor includesone or more devices, such as MOS-FET transistors built in accordancewith implementations of the invention. The term “processor” may refer toany device or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The communication chip 606 also includes an integrated circuit diepackaged within the communication chip 606. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more devices, such as MOS-FETtransistors built in accordance with implementations of the invention.

In further implementations, another component housed within thecomputing device 600 may contain an integrated circuit die that includesone or more devices, such as MOS-FET transistors built in accordancewith implementations of the invention.

In various implementations, the computing device 600 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 600 may be any other electronic device that processes data.

FIG. 7 illustrates an interposer 700 that includes one or moreembodiments. The interposer 700 is an intervening substrate used tobridge a first substrate 702 to a second substrate 704. The firstsubstrate 702 may be, for instance, an integrated circuit die. Thesecond substrate 704 may be, for instance, a memory module, a computermotherboard, or another integrated circuit die. Generally, the purposeof an interposer 700 is to spread a connection to a wider pitch or toreroute a connection to a different connection. For example, aninterposer 700 may couple an integrated circuit die to a ball grid array(BGA) 706 that can subsequently be coupled to the second substrate 704.In some embodiments, the first and second substrates 702/704 areattached to opposing sides of the interposer 700. In other embodiments,the first and second substrates 702/704 are attached to the same side ofthe interposer 700. And in further embodiments, three or more substratesare interconnected by way of the interposer 700.

The interposer 700 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposermay be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials.

The interposer 700 may include metal interconnects 708 and vias 710,including but not limited to through-silicon vias (TSVs) 712. Theinterposer 700 may further include embedded devices 714, including bothpassive and active devices. Such devices include, but are not limitedto, capacitors, decoupling capacitors, resistors, inductors, fuses,diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 700. In accordancewith embodiments of the invention, apparatuses or processes disclosedherein may be used in the fabrication of interposer 700.

Although specific embodiments have been described above, theseembodiments are not intended to limit the scope of the presentdisclosure, even where only a single embodiment is described withrespect to a particular feature. Examples of features provided in thedisclosure are intended to be illustrative rather than restrictiveunless stated otherwise. The above description is intended to cover suchalternatives, modifications, and equivalents as would be apparent to aperson skilled in the art having the benefit of the present disclosure.

The scope of the present disclosure includes any feature or combinationof features disclosed herein (either explicitly or implicitly), or anygeneralization thereof, whether or not it mitigates any or all of theproblems addressed herein. Accordingly, new claims may be formulatedduring prosecution of the present application (or an applicationclaiming priority thereto) to any such combination of features. Inparticular, with reference to the appended claims, features fromdependent claims may be combined with those of the independent claimsand features from respective independent claims may be combined in anyappropriate manner and not merely in the specific combinationsenumerated in the appended claims.

The following examples pertain to further embodiments. The variousfeatures of the different embodiments may be variously combined withsome features included and others excluded to suit a variety ofdifferent applications.

Example embodiment 1: A memory cell includes a storage component thatincludes a chalcogenide stack that includes a plurality of layers ofmaterial and a selector component that includes a Schottky diode.

Example embodiment 2: The memory cell of example embodiment 1, whereinthe chalcogenide stack includes a superlattice structure.

Example embodiment 3: The memory cell of example embodiment 1, furthercomprising a first electrode surrounding the selector component.

Example embodiment 4: The memory cell of example embodiment 1, furthercomprising a second electrode surrounded by the selector component.

Example embodiment 5: The memory cell of example embodiment 4, whereinthe second electrode surrounds the storage component.

Example embodiment 6: The memory cell of example embodiment 1, whereinthe storage component surrounds a bit line conductor.

Example embodiment 7: The memory cell of example embodiments 1, 2, 3, 4,5, and 6 wherein the Schottky diode includes a Pd-IGZO Schottkyinterface.

Example embodiment 8: A memory cell array includes a plurality of wordlines, a plurality of bit lines and a plurality of memory cells coupledat intersections of the plurality of word lines and the plurality of bitlines. The memory cells include a storage component that includes achalcogenide stack that includes a plurality of layers of material and aselector component that includes a Schottky diode.

Example embodiment 9: The memory cell array of example embodiment 8,wherein the chalcogenide stack includes a superlattice structure.

Example embodiment 10: The memory cell array of example embodiment 8,further comprising a first electrode surrounding the selector component.

Example embodiment 11: The memory cell array of example embodiment 8,further comprising a second electrode surrounded by the selectorcomponent.

Example embodiment 12: The memory cell array of example embodiment 11,wherein the second electrode surrounds the storage component.

Example embodiment 13: The memory cell array of example embodiment 8,wherein the storage component surrounds a bit line conductor.

Example embodiment 14: The memory cell array of claims 8, 9, 10, 11, 12and 13 wherein the Schottky diode includes a Pd-IGZO Schottky interface.

Example embodiment 15: A method includes forming a storage componentthat includes a chalcogenide stack that includes a plurality of layersof material and forming a selector component that includes a Schottkydiode.

Example embodiment 16: The method of example embodiment 15, wherein thechalcogenide stack includes a superlattice structure.

Example embodiment 17: The method of example embodiment 15, furthercomprising a first electrode surrounding the selector component.

Example embodiment 18: The method of example embodiment 15, furthercomprising a second electrode surrounded by the selector component.

Example embodiment 19: The method of example embodiment 18, wherein thesecond electrode surrounds the memory component.

Example embodiment 20: The method of example embodiment 15, 16, 17, 18and 19 wherein the memory component surrounds a bit line conductor.

What is claimed is:
 1. A memory cell, comprising: a storage componentthat includes a chalcogenide stack that includes a plurality of layersof material; and a selector component that includes a Schottky diode. 2.The memory cell of claim 1, wherein the chalcogenide stack includes asuperlattice structure.
 3. The memory cell of claim 1, furthercomprising a first electrode surrounding the selector component.
 4. Thememory cell of claim 1, further comprising a second electrode surroundedby the selector component.
 5. The memory cell of claim 4, wherein thesecond electrode surrounds the storage component.
 6. The memory cell ofclaim 1, wherein the storage component surrounds a bit line conductor.7. The memory cell of claim 1, wherein the Schottky diode includes aPd-IGZO Schottky interface.
 8. A memory cell array, comprising: aplurality of word lines; a plurality of bit lines; and a plurality ofmemory cells coupled at intersections of the plurality of word lines andthe plurality of bit lines, comprising: a memory component that includesa chalcogenide stack that includes a plurality of layers of material;and a selector component that includes a Schottky diode.
 9. The memorycell array of claim 8, wherein the chalcogenide stack includes asuperlattice structure.
 10. The memory cell array of claim 8, furthercomprising a first electrode surrounding the selector component.
 11. Thememory cell array of claim 8, further comprising a second electrodesurrounded by the selector component.
 12. The memory cell array of claim11, wherein the second electrode surrounds the memory component.
 13. Thememory cell array of claim 8, wherein the memory component surrounds abit line conductor.
 14. The memory cell array of claim 8, wherein theSchottky diode includes a Pd-IGZO Schottky interface.
 15. A method,comprising: forming a memory component that includes a chalcogenidestack that includes a plurality of layers of material; and forming aselector component that includes a Schottky diode.
 16. The method ofclaim 15, wherein the chalcogenide stack includes a superlatticestructure.
 17. The method of claim 15, further comprising a firstelectrode surrounding the selector component.
 18. The method of claim15, further comprising a second electrode surrounded by the selectorcomponent.
 19. The method of claim 18, wherein the second electrodesurrounds the memory component.
 20. The method of claim 15, wherein thememory component surrounds a bit line conductor.